Chun-Nan Lin

Title: The Innovative Contributions of Chun-Nan Lin

Introduction

Chun-Nan Lin is a notable inventor based in Changhua, Taiwan. He has made significant contributions to the field of memory structures, showcasing his expertise through his innovative patent.

Latest Patents

Chun-Nan Lin holds a patent for a memory structure with a high coupling ratio. This invention describes a memory structure comprising a plurality of memory cells. Each memory cell includes a substrate, a shallow trench isolation, a spacer, a tunnel oxide, and a floating gate. The shallow trench isolation in the substrate is utilized to define an active area. The spacer is positioned at the sidewall of the shallow trench isolation and is higher than the shallow trench isolation. The tunnel oxide is placed on the active area, while the floating gate is situated on the tunnel oxide.

Career Highlights

Chun-Nan Lin is currently employed at Promos Technologies, Inc., where he continues to develop innovative solutions in the field of memory technology. His work has contributed to advancements in memory structures, enhancing their efficiency and performance.

Collaborations

Chun-Nan Lin collaborates with talented individuals such as Chih-Ping Chung and Chung-Yi Chen, further enriching his work environment and fostering innovation.

Conclusion

Chun-Nan Lin's contributions to memory technology through his patent demonstrate his commitment to innovation and excellence in his field. His work continues to influence advancements in memory structures, showcasing the importance of inventive minds in technology.