The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2009
Filed:
Nov. 15, 2005
Chih-ping Chung, Linluo Township, Pingtung County, TW;
Chun-nan Lin, Changhua, TW;
Chung-yi Chen, Jhonghe, TW;
Hung-kwei Liao, Longtan Township, Taoyuan County, TW;
Chih-Ping Chung, Linluo Township, Pingtung County, TW;
Chun-Nan Lin, Changhua, TW;
Chung-Yi Chen, Jhonghe, TW;
Hung-Kwei Liao, Longtan Township, Taoyuan County, TW;
ProMos Technologies Inc., Hsinchu, TW;
Abstract
A memory structure comprising a plurality of memory cells is described. Each memory cell comprises a substrate, a shallow trench isolation, a spacer, a tunnel oxide, and a floating gate. The shallow trench isolation in the substrate is used to define an active area. The spacer is at the sidewall of the shallow trench isolation and is higher than the shallow trench isolation. The tunnel oxide is on the active area. The floating gate is on the tunnel oxide.