Hsinchu County, Taiwan

Chun-Chieh Chao


Average Co-Inventor Count = 3.3

ph-index = 1


Location History:

  • Hsinchu, TW (2019)
  • Hsinchu County, TW (2022 - 2024)

Company Filing History:


Years Active: 2019-2024

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3 patents (USPTO):Explore Patents

Title: Innovations of Chun-Chieh Chao

Introduction

Chun-Chieh Chao is a notable inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of memory technology, particularly in the development of magnetoresistive random access memory (MRAM). With a total of three patents to his name, Chao's work is at the forefront of innovation in non-volatile memory systems.

Latest Patents

Chao's latest patents include groundbreaking technologies that enhance the functionality of MRAM. One of his notable inventions is a "Magnetoresistive random access memory for physically unclonable function technology and associated random code generating method." This patent describes a method for generating random codes using MRAM cells, which involves programming cells into an anti-parallel state and adjusting control currents based on verification actions. Another significant patent is the "Random code generator with non-volatile memory," which outlines a system that utilizes a differential cell array and a power supply circuit to generate cell currents for random code generation.

Career Highlights

Chao is currently employed at Ememory Technology Inc., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of non-volatile memory systems, making them more efficient and reliable.

Collaborations

Chao collaborates with talented individuals in his field, including coworkers Tsung-Mu Lai and Chun-Yuan Lo. Their combined expertise contributes to the innovative environment at Ememory Technology Inc.

Conclusion

Chun-Chieh Chao's contributions to memory technology through his patents and collaborations highlight his role as a leading inventor in the industry. His work continues to influence advancements in non-volatile memory systems, showcasing the importance of innovation in technology.

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