Suwon, South Korea

Chulwon Lee

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chulwon Lee. Retrieved from https://idiyas.com/inventor/chulwon-lee-s33r6bzh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Chulwon Lee: Innovator in Nonvolatile Memory Technology

Introduction

Chulwon Lee is a prominent inventor based in Suwon-Si, South Korea. He is known for his contributions to the field of nonvolatile memory devices. With a focus on enhancing data storage technology, Lee has made significant strides in the industry.

Latest Patents

Chulwon Lee holds a patent for a nonvolatile memory device that includes memory planes, as well as a storage device and UFS device incorporating the same technology. This innovative device features a memory cell array and a control circuit. The memory cell array consists of multiple memory planes, each containing memory blocks filled with memory cells. The control circuit is designed to manage the operation of the memory cell array in units known as super blocks. These super blocks comprise memory blocks from different memory planes, ensuring efficient data management and storage.

Career Highlights

Lee is currently employed at Samsung Electronics Co., Ltd., where he continues to develop cutting-edge technologies in memory devices. His work has contributed to advancements in the efficiency and reliability of data storage solutions.

Collaborations

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Conclusion

Chulwon Lee's innovative work in nonvolatile memory technology exemplifies the importance of advancements in data storage solutions. His contributions are paving the way for future developments in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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