The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 28, 2025

Filed:

Jun. 20, 2024
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Youngkyu Kim, Suwon-si, KR;

Chulwon Lee, Suwon-si, KR;

Eunho Kim, Suwon-si, KR;

Cheolyong Choi, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/02 (2006.01); G11C 29/12 (2006.01);
U.S. Cl.
CPC ...
G06F 12/0246 (2013.01); G11C 29/12 (2013.01);
Abstract

A nonvolatile memory device includes a memory cell array and a control circuit. The memory cell array includes a plurality of memory planes each including memory blocks each of which includes memory cells. The control circuit controls an operation of the memory cell array in units of super blocks. The super blocks include memory blocks included in different memory planes. A first memory block is included in a first super block and a first memory plane, and stores first sensitive data required while operating the nonvolatile memory device. A second memory block is included in the first super block and a second memory plane, and stores replicated data of the first sensitive data. A third memory block is included in the first super block and a third memory plane, and stores second sensitive data required while operating the nonvolatile memory device is operating and obtained during a first manufacturing process.


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