Chul-ho Chung

Title: Chul-ho Chung: Innovator in MOS Transistor Technology

Introduction

Chul-ho Chung is a prominent inventor based in Yongin, South Korea. He is known for his significant contributions to the field of semiconductor technology, particularly in the development of MOS transistors. His innovative work has led to advancements that enhance the performance and efficiency of electronic devices.

Latest Patents

Chul-ho Chung holds a patent for a "MOS transistor having a mesh-type gate electrode." This invention features a mesh-shaped gate electrode positioned over a substrate's surface. The design includes multiple first elongate wirings that run parallel to each other, along with several second elongate wirings that also extend parallel. The intersection of these wirings creates an array of gate intersection regions, which further define an array of source/drain regions within the substrate. To minimize gate capacitance, the design incorporates at least one oxide region situated in the substrate beneath the mesh-shaped gate electrode. This innovative approach allows for an array of oxide regions to be strategically placed below the gate intersection regions.

Career Highlights

Chul-ho Chung is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His work at Samsung has positioned him at the forefront of semiconductor innovation, contributing to the company's reputation for cutting-edge technology.

Collaborations

Chul-ho Chung has collaborated with notable colleagues, including Duk-min Yi and Han-su Oh. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Chul-ho Chung's contributions to the field of MOS transistor technology exemplify the spirit of innovation. His patent for a mesh-type gate electrode represents a significant advancement in semiconductor design, showcasing his expertise and commitment to enhancing electronic performance.