The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Mar. 11, 2004
Duk-min Yi, Yongin, KR;
Han-su OH, Suwon, KR;
Chul-ho Chung, Yongin, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A mesh-shaped gate electrode is located over a surface of a substrate. The mesh-shaped gate electrode includes a plurality of first elongate wirings extending parallel to one another, and a plurality of second elongate wirings extending parallel to one another. The first elongate wirings intersect the second elongate wirings to define an array of gate intersection regions over the surface of the substrate and to further define an array of source/drain regions of the substrate. To reduce gate capacitance, at least one oxide region may be located in the substrate below the mesh-shaped gate electrode. For example, an array of oxide regions may be respectively located below the array of gate intersection regions.