Chrong-Jong Lin

Title: Innovations of Chrong-Jong Lin in Flash Memory Technology

Chrong-Jong Lin is a notable inventor based in Hsin-Tien, Taiwan. He has made significant contributions to the field of flash memory technology, particularly with his innovative patent that addresses key challenges in memory cell design.

Latest Patents

Chrong-Jong Lin holds a patent for a flash memory structure with a stacking gate formed using a damascene-like structure. This invention presents a novel approach to constructing a flash memory cell, where the stacked gate is created through a modified damascene process rather than traditional methods. The patent details a process where a trench is formed in a nitride layer over a substrate, allowing for the conformal deposition of a polysilicon layer to create the floating gate. This method effectively reduces poly residues and prevents damage to the underlying substrate, enhancing the performance and reliability of flash memory cells. He has 1 patent to his name.

Career Highlights

Chrong-Jong Lin is associated with Taiwan Semiconductor Manufacturing Company Ltd., a leading player in the semiconductor industry. His work has contributed to advancements in memory technology, showcasing his expertise and innovative thinking in the field.

Collaborations

Chrong-Jong Lin has collaborated with notable colleagues, including Jong Chen and Hung-Der Su. Their combined efforts have furthered research and development in semiconductor technologies.

Conclusion

Chrong-Jong Lin's contributions to flash memory technology exemplify the importance of innovation in the semiconductor industry. His patented methods not only address existing challenges but also pave the way for future advancements in memory cell design.