Christopher Boguslow Kocon

Title: Innovations by Christopher Boguslow Kocon in Semiconductor Technology

Introduction: Christopher Boguslow Kocon is an inventive mind from Plains, Pennsylvania, known for his contributions to semiconductor technology. With a keen focus on enhancing semiconductor fabrication processes, Kocon has successfully secured a patent that showcases his innovative approach to creating MOS-gated devices.

Latest Patents: Kocon holds a notable patent titled "Method of making a MOS-gated semiconductor device with a single diffusion." This patent details a manufacturing method wherein an arsenic dopant is implanted through a mask to establish a first layer, while a boron dopant is similarly implanted to create a second layer, deeper than the first. Remarkably, this method allows both dopants to be diffused simultaneously in a single diffusion step, leading to the formation of a P+ body region, an N+ source region, and a P-type channel region efficiently.

Career Highlights: Throughout his career, Kocon has demonstrated a commitment to advancing semiconductor technology. His innovative methods have the potential to streamline production and enhance the performance of semiconductor devices, making him a valuable contributor to the field.

Collaborations: Kocon has had the opportunity to work alongside esteemed colleagues, including John M Neilson and Linda Susan Brush. Their collaborative efforts likely provide a rich environment for innovation and development in their shared field of expertise.

Conclusion: Christopher Boguslow Kocon's contributions through his patent in semiconductor technology signify his role as an important inventor in this evolving field. His innovative fabrication method exemplifies the ongoing advancements in electronics, showcasing the impact of dedicated inventors like Kocon on the technology of tomorrow.