The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2000
Filed:
Jun. 30, 1997
John Manning Neilson, Norristown, PA (US);
Linda Susan Brush, Mountaintop, PA (US);
Frank Stensney, Mountaintop, PA (US);
John Lawrence Benjamin, Mountaintop, PA (US);
Anup Bhalla, Wilkes-Barre, PA (US);
Christopher Lawrence Rexer, Mountaintop, PA (US);
Richard Douglas Stokes, Shavertown, PA (US);
Christopher Boguslow Kocon, Plains, PA (US);
Louise E Skurkey, Conyngham, PA (US);
Christopher Michael Scarba, Tresckow, PA (US);
Other;
Abstract
A method of fabricating a MOS-gated semiconductor device in which arsenic dopant is implanted through a mask to form a first layer, boron dopant is implanted through the mask to form a second layer deeper than the first layer, and in which a single diffusion step diffuses the implanted arsenic and the implanted boron at the same time to form a P+ body region with an N+ source region therein and a P type channel region.