This inventor holds 1 USPTO granted patent. Top assignee: U.S. Philips Corporation. Active years: 1990.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1990
Title: Christian Rocher: Innovator in Field Effect Transistor Technology
Introduction
Christian Rocher is a notable inventor based in Sucy en Brie, France. She has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of field effect transistors. Her innovative approach has led to the development of a unique method that enhances the performance and efficiency of these essential electronic components.
Latest Patents
Christian Rocher holds a patent for a method of manufacturing a field effect transistor. This invention involves a sophisticated process that includes the formation of an active n-type layer on a semi-insulating gallium arsenide substrate. The design features a Schottky gate electrode with a trapezoidal shape, which is crucial for the transistor's functionality. The self-aligned source and drain regions further optimize the device's performance, making it a significant advancement in the field.
Career Highlights
Rocher is currently associated with U.S. Philips Corporation, where she continues to push the boundaries of semiconductor technology. Her work has been instrumental in developing new methods that improve the efficiency and reliability of electronic devices. With a focus on innovation, she has established herself as a key player in the industry.
Collaborations
Throughout her career, Christian Rocher has collaborated with esteemed colleagues such as Patrick D Rabinzohn and Serge Gourrier. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.
Conclusion
Christian Rocher's contributions to the field of field effect transistors exemplify her dedication to innovation and excellence. Her patented method represents a significant leap forward in semiconductor technology, showcasing her expertise and commitment to advancing the industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
