Christian J Werkhoven

Title: Christian J Werkhoven: Innovator in Low Temperature Silicon Compound Deposition

Introduction

Christian J Werkhoven is a notable inventor based in Tempe, AZ (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of low temperature silicon compound deposition. His innovative approaches have led to advancements in the quality and efficiency of silicon-containing compound layers.

Latest Patents

Werkhoven holds a patent for a process titled "Low temperature silicon compound deposition." This patent describes sequential processes conducted in a batch reaction chamber to form ultra high quality silicon-containing compound layers, such as silicon nitride layers, at low temperatures. Under reaction rate limited conditions, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. The flow of trisilane is then interrupted, allowing for the formation of a silicon nitride layer by nitriding the silicon layer with nitrogen radicals. This process can be repeated for greater thickness, producing about 5-7 angstroms of silicon nitride with each cycle.

Career Highlights

Christian J Werkhoven is associated with ASM International N.V., a company known for its innovative solutions in the semiconductor industry. His work has been instrumental in enhancing the capabilities of silicon deposition processes, contributing to the advancement of semiconductor manufacturing technologies.

Collaborations

Werkhoven has collaborated with notable colleagues, including Ruben Haverkort and Yuet Mei Wan. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas within the field.

Conclusion

Christian J Werkhoven's contributions to low temperature silicon compound deposition exemplify the spirit of innovation in the semiconductor industry. His work continues to influence advancements in technology, showcasing the importance of research and development in this critical field.