Wappingers Falls, NY, United States of America

Christian Arndt

This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Christian Arndt. Retrieved from https://idiyas.com/inventor/christian-arndt-o8r0eeo0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 33(Granted Patents)


Company Filing History:

goldMedal1 out of 834,659 
Other
 patents

Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Christian Arndt

Introduction

Christian Arndt is a notable inventor based in Wappingers Falls, NY (US). He has made significant contributions to the field of magnetic random access memory (MRAM) devices. His innovative approach has led to the development of a unique patent that enhances the efficiency of interconnect structures in MRAM technology.

Latest Patents

One of Christian Arndt's key patents is titled "Maskless array protection process flow for forming interconnect vias in magnetic random access memory devices." This patent outlines a method for forming interconnect structures in MRAM devices. The process includes defining an array of magnetic tunnel junction (MTJ) stacks over a lower metallization level. An encapsulating dielectric layer is formed over the array of MTJ stacks and the lower metallization level. Subsequently, a via opening is defined in the encapsulating dielectric layer, and a planar interlevel dielectric (ILD) layer is deposited over the encapsulating dielectric layer and within the via opening. Openings are then formed within the ILD layer, over the array of MTJ stacks and the via opening. This innovative method has the potential to significantly improve the performance of MRAM devices.

Career Highlights

Christian Arndt has achieved recognition for his inventive work in the field of memory technology. His patent portfolio includes 1 patent, showcasing his commitment to advancing the capabilities of MRAM devices. His contributions have been instrumental in pushing the boundaries of what is possible in memory technology.

Collaborations

Christian has collaborated with talented individuals in his field, including Joachim Nuetzel and Greg Costrini. These partnerships have fostered an environment of innovation and creativity, leading to advancements in MRAM technology.

Conclusion

Christian Arndt's work exemplifies the spirit of innovation in the field of memory technology. His contributions, particularly through his patent on MRAM devices, highlight the importance of inventive thinking in advancing technology. His collaborations further enhance the impact of his work, making him a significant figure in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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