Chiung-Wen Hsu

Title: Chiung-Wen Hsu: Innovator in Semiconductor Technology

Introduction

Chiung-Wen Hsu is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the area of etch profile control for isolation trenches. With a total of 2 patents, Hsu's work has advanced the capabilities of semiconductor devices.

Latest Patents

Hsu's latest patents focus on a device that includes a substrate, a first fin, a second fin, a first isolation structure, a second isolation structure, and a gate structure. The first fin extends from a p-type region of the substrate, while the second fin extends from an n-type region. The first isolation structure is positioned over the p-type region and adjacent to the first fin, featuring a bottom surface and opposite sidewalls. Notably, the first isolation structure is deeper than the second isolation structure, which is located over the n-type region. The gate structure is situated over the first isolation structure, covering the first fin.

Career Highlights

Chiung-Wen Hsu is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work has been instrumental in developing innovative solutions that enhance the performance and efficiency of semiconductor devices.

Collaborations

Hsu has collaborated with notable colleagues, including Hsien-Chung Huang and Mei-Ju Kuo. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Chiung-Wen Hsu's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in semiconductor manufacturing and design.