Taiwan Semiconductor Manufacturing Comp. Ltd.

Chiung-Wen Hsu

Chao-Cheng Chen

Yu-Chi Lin

Yu-Ting Weng

Hsien-Chung Huang

Mei-Ju Kuo

Ting-Chung Wang

A device includes a substrate, a first fin, a second fin, a first isolation structure, a second isolation structure, and a gate structure. The first fin extends from a p-type region of the substrate. The second fin extends from an n-type region of the substrate. The first isolation structure is over the p-type region and adjacent to the first fin. The first isolation structure has a bottom surface and opposite first and second sidewalls connected to the bottom surface, a first round corner is between the bottom surface and the first sidewall of the first isolation structure, and the first sidewall is substantially parallel to the second sidewall. The second isolation structure is over the n-type region and adjacent to the first fin. The first isolation structure is deeper than the second isolation structure. The gate structure is over the first isolation structure and covering the first fin.

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Tainan, Taiwan

Chiung-Wen Hsu