Chinq-Long Hsu

Title: Chinq-Long Hsu: Innovator in Ge Epitaxial Layer Technology

Introduction

Chinq-Long Hsu is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the growth of germanium (Ge) epitaxial layers. His innovative methods have the potential to enhance the performance of various electronic devices.

Latest Patents

Chinq-Long Hsu holds a patent titled "Method for growing Ge epitaxial layer on patterned structure with cyclic annealing." This invention describes a process where a Ge epitaxial layer is grown on a silicon substrate featuring a patterned structure. The method utilizes cyclic annealing to confine dislocation defects, resulting in a high-quality Ge epitaxial layer. This approach is not only cost-effective but also simplifies the manufacturing process. The Ge epitaxial layer produced can be applied to high mobility Ge devices and any lattice-mismatched epitaxy on photonics devices. He has 1 patent to his name.

Career Highlights

Chinq-Long Hsu is affiliated with the National Applied Research Laboratories, where he continues to advance research in semiconductor technologies. His work has garnered attention for its practical applications and innovative techniques.

Collaborations

Chinq-Long Hsu has collaborated with notable colleagues, including Ming-Hsin Cheng and Guang-Li Luo. Their combined expertise has contributed to the development of cutting-edge technologies in the field.

Conclusion

Chinq-Long Hsu is a key figure in the advancement of Ge epitaxial layer technology. His innovative methods and collaborations have the potential to significantly impact the semiconductor industry.