The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2010
Filed:
Sep. 11, 2007
Ming-hsin Cheng, Hsinchu, TW;
Shih-chiang Huang, Hsinchu, TW;
Tsung-chieh Cheng, Hsinchu, TW;
Guang-li Luo, Hsinchu, TW;
Chinq-long Hsu, Hsinchu, TW;
Ming-Hsin Cheng, Hsinchu, TW;
Shih-Chiang Huang, Hsinchu, TW;
Tsung-Chieh Cheng, Hsinchu, TW;
Guang-Li Luo, Hsinchu, TW;
Chinq-Long Hsu, Hsinchu, TW;
National Applied Research Laboratories, Hsinchu, TW;
Abstract
A Ge epitaxial layer is grown on a silicon substrate with a patterned structure. Through a cyclic annealing, dislocation defects are confined. The present invention provides a method for manufacturing a high-quality Ge epitaxial layer with a low cost and a simple procedure. The Ge epitaxial layer obtained can be applied to high mobility Ge devices or any lattice-mismatched epitaxy on a photonics device.