Hsinchu, Taiwan

Ching-Tzong Sune

This inventor holds 2 USPTO granted patents. Top assignee: Episil Technologies Inc.. Active years: 2001-2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ching-Tzong Sune. Retrieved from https://idiyas.com/inventor/ching-tzong-sune-ib2lh8j2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 2

Forward Citations = 17(Granted Patents)


Company Filing History:


Years Active: 2001-2003

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Innovations by Ching-Tzong Sune

Introduction

Ching-Tzong Sune is a prominent inventor based in Hsin-Chu, Taiwan. She has made significant contributions to the field of semiconductor technology, particularly in the fabrication of advanced electronic devices. With a total of two patents to her name, her work has garnered attention for its innovative approaches and practical applications.

Latest Patents

Ching-Tzong Sune's latest patents include a self-aligned copper plating and CMP process for RF lateral MOS devices. This method involves several steps, starting with a substrate that has a gate oxide layer. A first layer of polysilicon is formed over this layer, followed by a second layer of material. The polysilicon and second layer are then patterned to create a gate with exposed sidewalls. Sidewall spacers are formed on these sidewalls, and the upper patterned second material layer is removed to create a cavity above the polysilicon layer. A planarized copper plug is then formed within this cavity.

Her second patent focuses on the fabrication process for a three-dimensional trench emitter bipolar transistor. This process features an N-type polysilicon emitter structure located in an emitter trench. It also includes a P-type base region directly underlying the N-type emitter region, which is formed in the semiconductor substrate. The process involves creating an emitter trench, followed by a large angle ion implantation to form the P-type base region along the sides of the trench. The formation of a polysilicon emitter structure and an anneal cycle results in a narrow width emitter region.

Career Highlights

Ching-Tzong Sune is currently associated with Episil Technologies Inc., where she continues to innovate in the semiconductor industry. Her work has not only advanced the technology but has also contributed to the efficiency and performance of electronic devices.

Collaborations

[This section has been skipped due to space constraints.]

Conclusion

Ching-Tzong Sune's contributions to semiconductor technology through her innovative patents highlight her role as a leading inventor in her field. Her work continues to influence the development of advanced electronic devices, showcasing her expertise and commitment to innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…