The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2001
Filed:
Aug. 30, 1999
Ching-Tzong Sune, Hsin-chu, TW;
Episil Technologies, Inc., Hsin-Chu, TW;
Abstract
A process for fabricating a bipolar junction transistor, featuring an N type, polysilicon emitter structure, located in an emitter trench, and featuring a narrow width. P type base region, located directly underlying an N type, emitter region, which is formed in the semiconductor substrate, along the vertical and horizontal sides of the emitter trench, has been developed. The process features forming an emitter trench in a semiconductor substrate, followed by a large angle ion implantation procedure, used to form a P type, base region, in an area of the semiconductor substrate located along the sides of the emitter trench. Formation of a polysilicon emitter structure, followed by an anneal cycle, create a narrow width, emitter region, underlying the polysilicon emitter structure, also resulting in the formation of a narrow width, P type base region, located between the overlying N type emitter region, and an underlying N type, epitaxial silicon layer.