Ching-Shi Jeno

Title: Innovations of Ching-Shi Jeno in Memory Technology

Introduction

Ching-Shi Jeno is an accomplished inventor based in Los Altos Hills, California. He has made significant contributions to the field of memory technology, particularly in the development of scalable flash EEPROM memory cells. His innovative approach has led to advancements that enhance the performance and reliability of memory devices.

Latest Patents

Ching-Shi Jeno holds a patent for a "Method of making a scalable flash EEPROM memory cell with notched floating gate and graded source region." This patent describes a memory device that includes source and drain regions defining a channel region between them. A select gate is formed over and insulated from a first portion of the channel region. A conductive floating gate is positioned over and insulated from the source region and a second portion of the channel region. Notably, a notch is formed in the floating gate's bottom surface, which can either align with the edge of the source region or be positioned over it. This design increases the breakdown voltage of the source junction, thereby improving the overall performance of the memory device.

Career Highlights

Ching-Shi Jeno is currently associated with Integrated Memory Technologies, Inc., where he continues to innovate in the field of memory technology. His work has been instrumental in developing advanced memory solutions that meet the growing demands of modern computing.

Collaborations

Throughout his career, Ching