Ching-Shi Jeng

Title: Innovations of Ching-Shi Jeng: A Pioneer in Flash EEPROM Technology

Introduction

Ching-Shi Jeng is an accomplished inventor based in Los Altos Hills, California. She has made significant contributions to the field of semiconductor technology, particularly in the development of scalable flash EEPROM memory cells. With a total of four patents to her name, Jeng's work has had a profound impact on memory storage solutions.

Latest Patents

Jeng's latest patents include a method of manufacturing a scalable flash EEPROM memory cell with a floating gate spacer wrapped by a control gate. This innovative design features a semiconductor substrate with a drain and a source, along with a channel positioned between them. A select gate is strategically placed over a portion of the channel and is insulated from it. The floating gate acts as a spacer, with its bottom surface positioned over a second portion of the channel and insulated from it. The control gate is situated above the floating gate, enhancing the functionality of the memory cell. Another notable patent is for a scalable flash EEPROM memory cell, which also includes a memory array utilizing this advanced memory cell design.

Career Highlights

Throughout her career, Jeng has worked with Integrated Memory Technologies, Inc., where she has honed her skills and contributed to groundbreaking advancements in memory technology. Her expertise in semiconductor design has positioned her as a leader in her field.

Collaborations

Ching-Sh