Company Filing History:
Years Active: 2014
Title: Ching-Sen Lu: Innovator in Semiconductor Device Fabrication
Introduction
Ching-Sen Lu is an inventor based in Tainan City, Taiwan. He has made significant contributions to the field of semiconductor device fabrication. Although he currently holds no granted patents, his innovative approaches are reflected in his latest patent applications.
Latest Patent Applications
Ching-Sen Lu's latest patent applications include two notable methods. The first is titled "METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH ENHANCED CHANNEL STRESS." This method outlines a process that begins with providing a substrate, followed by the formation of at least one source/drain region and a channel. A dummy gate is then created over the channel, and a contact structure is formed over the source/drain region. After the contact structure is established, the dummy gate is removed to create a trench.
The second application is "ADJUSTING METHOD OF CHANNEL STRESS." This method involves providing a substrate and forming a metal-oxide-semiconductor field-effect transistor (MOSFET) on it. The MOSFET consists of a source/drain region, a channel, a gate, a gate dielectric layer, and a spacer. A dielectric layer is formed on the substrate, covering the MOSFET, followed by a flattening process applied to the dielectric layer. The remaining dielectric layer is then removed to expose the source/drain region, and a non-conformal high-stress dielectric layer is formed on the substrate with the exposed source/drain region.
Conclusion
Ching-Sen Lu is an innovative inventor whose work in semiconductor device fabrication showcases his expertise and potential in the field. His latest patent applications reflect his commitment to advancing technology in this area.