Hsinchu, Taiwan

Ching-ming Lee

This inventor holds 1 USPTO granted patent. Top assignee: United Microelectronics Corp.. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ching-ming Lee. Retrieved from https://idiyas.com/inventor/ching-ming-lee-3zrg3wh9

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Innovations of Ching-ming Lee in DRAM Capacitor Fabrication.

Introduction

Ching-ming Lee is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of DRAM capacitors. His innovative approach has led to advancements that enhance the performance and efficiency of memory devices.

Latest Patents

Ching-ming Lee holds a patent for a method of fabricating a DRAM capacitor. The invention focuses on a bowl-shaped electrode design that increases the area of the capacitor plates, thereby improving the charge storage capability. This method simplifies the fabrication process and reduces the height of the capacitor compared to conventional designs. He has 1 patent to his name.

Career Highlights

Lee is associated with United Microelectronics Corporation, a leading semiconductor foundry. His work at the company has positioned him as a key player in the development of advanced memory technologies. His innovative methods have contributed to the company's reputation for excellence in semiconductor manufacturing.

Collaborations

Ching-ming Lee has collaborated with notable colleagues, including Wunn-Shien Liao and Jau-Hone Lu. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.

Conclusion

Ching-ming Lee's contributions to the field of DRAM capacitor fabrication exemplify the spirit of innovation in semiconductor technology. His work not only enhances the performance of memory devices but also showcases the importance of collaboration in driving technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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