Ching-Hsun Chao

Title: Innovations of Ching-Hsun Chao in Chemical Mechanical Polishing

Introduction

Ching-Hsun Chao is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of chemical mechanical polishing, particularly in the context of substrates containing ruthenium and copper. His innovative methods have implications for various applications in electronics and materials science.

Latest Patents

Chao holds a patent titled "Method for chemical mechanical polishing substrates containing ruthenium and copper." This patent describes a method for chemical mechanical polishing of a substrate that includes ruthenium and copper. The process involves contacting the substrate with a polishing slurry that contains an abrasive, hypochlorite, a copolymer of acrylic acid and methacrylic acid, benzotriazole, poly(methyl vinyl ether), and a non-ionic surfactant at a pH of 9 to 11. This innovative approach enhances the efficiency and effectiveness of the polishing process.

Career Highlights

Ching-Hsun Chao is currently employed at Rohm and Haas Electronic Materials CMP Holdings, Inc. His work at this company has allowed him to develop and refine his patented methods, contributing to advancements in the field of electronic materials. His expertise in chemical mechanical polishing has positioned him as a valuable asset in the industry.

Collaborations

Chao has collaborated with several professionals in his field, including Hongyu Wang and Lee Melbourne Cook. These collaborations have fostered a productive environment for innovation and have led to further advancements in chemical mechanical polishing techniques.

Conclusion

Ching-Hsun Chao's contributions to the field of chemical mechanical polishing are noteworthy. His patented methods and collaborative efforts have significantly impacted the industry, showcasing the importance of innovation in advancing technology.