Chin Shu Tan

Title: Innovations of Chin Shu Tan

Introduction

Chin Shu Tan is a notable inventor based in Folsom, CA. He has made significant contributions to the field of data storage and circuit design. With a total of 2 patents, his work reflects a commitment to advancing technology.

Latest Patents

One of his latest patents is for a "Banked SRAM device with bit line refresh." This data storage device is designed to enhance memory array performance by partitioning it into multiple memory banks. It includes a bank enable circuit that allows for the activation of specific memory banks, along with an operation/pseudooperation enable circuit (OPEC) that generates necessary signals for these banks. This innovative design aims to improve data processing efficiency.

Another significant patent is the "Method and apparatus for realistic current and power calculation using simulation." This method provides a system for accurately calculating the current and power consumption of a circuit before silicon fabrication. By utilizing simulation and test vectors, it determines various variables to closely approximate actual silicon results. This approach is crucial for optimizing circuit performance and ensuring reliability.

Career Highlights

Chin Shu Tan is currently employed at Intel Corporation, where he continues to innovate in the field of technology. His work at Intel has allowed him to contribute to cutting-edge advancements in data storage and circuit design.

Collaborations

Throughout his career, Chin has collaborated with esteemed colleagues such as Rajesh Raman and Yung M Chang. These collaborations have further enriched his work and contributed to the success of various projects.

Conclusion

Chin Shu Tan's contributions to technology through his patents and work at Intel Corporation highlight his role as an influential inventor. His innovative approaches to data storage and circuit design continue to impact the industry positively.