Company Filing History:
Years Active: 2022
Title: Chin-Hsiu Huang: Innovator in Semiconductor Technology
Introduction
Chin-Hsiu Huang is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, showcasing his expertise through innovative patents. His work is instrumental in advancing the capabilities of semiconductor structures.
Latest Patents
Chin-Hsiu Huang holds a patent for a semiconductor structure and method for forming the same. This patent outlines a method that includes forming a first gate structure in a predetermined low-potential region of a substrate and a second gate structure in a predetermined high-potential region of the substrate. The process involves sequentially forming a first dielectric layer and a second dielectric layer covering both gate structures. Additionally, it describes the formation of a portion of a third dielectric layer along the sidewalls of the second gate structure and on the second dielectric layer. The method further details etching the first and second dielectric layers using the third dielectric layer as an etching hard mask to create composite spacers around the gate structures, with specific width requirements for each spacer.
Career Highlights
Chin-Hsiu Huang is associated with Vanguard International Semiconductor Corporation, where he applies his knowledge and skills in semiconductor technology. His work at this company has positioned him as a key player in the industry, contributing to advancements in semiconductor manufacturing processes.
Collaborations
Chin-Hsiu Huang collaborates with notable colleagues, including Tse-Hsiao Liu and Pao-Hao Chiu. These partnerships enhance the innovative environment in which he works, fostering the development of cutting-edge technologies.
Conclusion
Chin-Hsiu Huang's contributions to semiconductor technology through his patent and work at Vanguard International Semiconductor Corporation highlight his role as an influential inventor. His innovative methods continue to shape the future of semiconductor structures.