Tainan, Taiwan

Chih-Wen Tang

This inventor holds 2 USPTO granted patents. Top assignees: Solar Applied Materials Technology Corp., Tsinghua University. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chih-Wen Tang. Retrieved from https://idiyas.com/inventor/chih-wen-tang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.5

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2021-2026

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2 patents (USPTO):Explore Patents

Title: Chih-Wen Tang: Innovator in Magnetic Materials

Introduction

Chih-Wen Tang is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of magnetic materials, particularly in the development of advanced ferromagnetic layers and composite structures. With a total of 2 patents, his work has implications for various applications in memory technology.

Latest Patents

One of his latest patents involves an iron-cobalt based target. This invention provides a ferromagnetic free layer that comprises Fe, Co, B, and an additive metal. The composition is carefully designed, with the content of Co being more than 0 at % and less than 30 at %, and B being more than 10 at % and less than or equal to 35 at %. The additive metal, which includes Mo, Re, or a combination thereof, is present in a content of more than or equal to 2 at % and less than 10 at %. The thickness of the ferromagnetic free layer is between 1.5 nm and 2.5 nm. This layer can be applied to a magnetic tunnel junction (MTJ) structure, ensuring sufficient thermal stability and maintaining good magnetic properties after thermal treatment.

Another significant patent by Chih-Wen Tang focuses on a non-ferromagnetic spacing composite layer. This layer consists of first, second, and third spacing layers stacked in sequence. The first and third layers are made of materials such as Re, Rh, Ir, W, Mo, Ta, or Nb, while the second layer is composed of Ru. The second spacing layer has a thickness of at least 0.18 nm, and the total thickness of the composite layer ranges from 0.6 nm to 1 nm. This invention also includes a method for preparing the composite layer, a synthetic antiferromagnetic laminated structure, and a magnetoresistive random access memory (MRAM). The structure is designed to maintain coupling strength and RKKY indirect interaction after thermal treatment, preserving the recording function of MRAM.

Career Highlights

Chih-Wen Tang has worked with several prominent organizations, including Solar Applied Materials Technology Corporation and Tsinghua University. His experience in these institutions has allowed him to collaborate on various innovative projects and contribute to advancements in material science.

Collaborations

Some of his notable coworkers include Chun-L

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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