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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11171285 B1

PDFFull Text
Date of Patent:
Nov. 09, 2021

Filed:

Dec. 04, 2020

Non-ferromagnetic spacing composite layer, its method, synthetic antiferromagnetic laminated structure, and magnetoresistive random access memory

Applicant:

Solar Applied Materials Technology Corp., Tainan, TW;

Inventors:

Chih-Huang Lai, Tainan, TW;

Chun-Liang Yang, Tainan, TW;

Yi-Huan Chung, Tainan, TW;

Wei-Chih Huang, Tainan, TW;

Chih-Wen Tang, Tainan, TW;

Hui-Wen Cheng, Tainan, TW;

Assignee:

SOLAR APPLIED MATERIALS TECHNOLOGY CORP., Tainan, TW;

Attorney:

Muncy, Geissler, Olds & Lowe, P.C.

Primary Examiner:

Jami Valentine Miller

Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01L 43/10 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/16 (2013.01); H01L 27/222 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

Provided is a non-ferromagnetic spacing composite layer, comprising first, second and third spacing layers stacked in sequence. The first and third spacing layers are each made of Re, Rh, Ir, W, Mo, Ta, or Nb, and the second spacing layer is made of Ru. The second spacing layer has a thickness of equal to or more than 0.18 nm, and the non-ferromagnetic spacing composite layer has a total thickness of 0.6 nm to 1 nm. Also, provided are a method of preparing the non-ferromagnetic spacing composite layer, a synthetic antiferromagnetic laminated structure, and an MRAM. The synthetic antiferromagnetic laminated structure can maintain a certain coupling strength and the RKKY indirect interaction after thermal treatment, thereby keeping the recording function of MRAM.

Find Patent Forward Citations

Lai, Chih-Huang. (2021). Non-ferromagnetic spacing composite layer, its method, synthetic antiferromagnetic laminated structure, and magnetoresistive random access memory (U.S. Patent No. 11171285). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11171285

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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