This inventor holds 1 USPTO granted patent. Top assignee: Qualcomm Incorproated. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Chih-Sung Yang and a Bottom-Channel-Isolated GAA Transistor
Introduction
Chih-Sung Yang is an inventor associated with Hsinchu City, Taiwan, and Qualcomm Incorporated. His patent work includes a design for a gate-all-around (GAA) field-effect transistor that uses trench oxide to block a bottom channel.
Latest Patents
Yang is associated with 1 patent: “Bottom Channel Trench Isolated Gate All Around (GAA) Field Effect Transistor (FET).” The invention describes a substrate supporting a nanosheet structure, with source/drain regions connected to opposite ends of the nanosheet. A metal gate surrounds the nanosheet to define channels between those regions, while trench oxide blocks a bottom channel. This structure focuses on controlling the transistor’s channel configuration.
Career Highlights
Yang’s listed patent reflects work on nanosheet-based GAA transistor architecture and bottom-channel isolation. He is associated with Qualcomm Incorporated, a company involved in technology development.
Collaborations
Kwanyong Lim and Hyunwoo Park are identified as Yang’s coworkers. The available information does not specify their roles in the patent or the extent of their collaboration.
Conclusion
Chih-Sung Yang’s patent describes a GAA transistor design that combines a nanosheet structure with trench oxide to block a bottom channel.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile