The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Oct. 24, 2023
Qualcomm Incorporated, San Diego, CA (US);
Kwanyong Lim, San Diego, CA (US);
Hyunwoo Park, San Diego, CA (US);
Junjing Bao, San Diego, CA (US);
Chih-Sung Yang, Hsinchu City, TW;
Ming-Huei Lin, New Taipei City, TW;
Haining Yang, San Diego, CA (US);
QUALCOMM Incorproated, San Diego, CA (US);
Abstract
A gate all around (GAA) field effect transistor (GAA FET) is described. The GAA FET includes a substrate, having a nanosheet structure on the substrate. The GAA FET also includes a source/drain (SD) region in the substrate and coupled to a first end of the nanosheet structure. The GAA FET further includes a drain/source (DS) region in the substrate and coupled to a second end opposite the first end of the nanosheet structure. The GAA FET also includes a metal gate on the nanosheet structure to define channels between the source/drain region and the drain/source region. The GAA FET further includes a trench oxide blocking a bottom channel of the channels.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile