Changhua, Taiwan

Chih-Peng Tsai

This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chih-Peng Tsai. Retrieved from https://idiyas.com/inventor/chih-peng-tsai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Chih-Peng Tsai: Innovator in Semiconductor Technology

Introduction

Chih-Peng Tsai is an inventor based in Changhua County, Taiwan. He is known for his contributions to semiconductor technology, focusing on innovative methods for device formation and oxidation prevention.

Latest Patent Applications

Chih-Peng Tsai has submitted several notable patent applications. One of his latest applications is for a semiconductor device and methods of formation. This application describes a process where a thick bonding layer is formed over a semiconductor wafer, ensuring that the top surface in the edge region is at a greater vertical height than the bottom surface in the non-edge region. A photoresist material is then deposited and patterned to remain only on the edge region, allowing for precise etching of the bonding layer in the non-edge region. This results in a substantially flat and uniform top surface across the wafer.

Another significant application is for a cap layer designed for pad oxidation prevention. This application details a semiconductor structure, such as an integrated circuit die, which includes an enhanced cap layer that separates an etch stop layer from an interconnect pad. The cap layer is soft, allowing for testing without the need to form a pad opening, which simplifies the process and enhances efficiency.

Conclusion

Chih-Peng Tsai's innovative approaches in semiconductor technology demonstrate his commitment to advancing the field. His latest patent applications reflect a focus on improving device formation and preventing oxidation, showcasing his potential impact on future technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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