Company Filing History:
Years Active: 2003-2008
Title: Innovations of Chih-I Wu
Introduction
Chih-I Wu is a notable inventor based in Hillsboro, OR (US). He has made significant contributions to the field of technology, particularly in the area of semiconductor materials and processes. With a total of 5 patents to his name, Wu's work has had a considerable impact on the industry.
Latest Patents
One of his latest patents is titled "Sealing porous dielectrics with silane coupling reagents." This invention describes a method and structure for sealing porous dielectrics using silane coupling reagents. A sealant chain, formed from silicon, carbon, oxygen, and hydrogen, is exposed to a porous dielectric material. The sealant chain reacts with a second chain present in the porous dielectric, forming a continuous layer over the surface of the porous dielectric.
Another significant patent is the "Method to reduce the copper line roughness for increased electrical conductivity of narrow interconnects (<100nm)." This invention provides methods to reduce copper line roughness, thereby increasing electrical conductivity in narrow interconnects with a width of less than 100 nm. The process involves smoothing the surface on which the copper lines are formed through a short electrochemical etch, ultimately reducing the resistivity of the copper lines.
Career Highlights
Chih-I Wu is currently employed at Intel Corporation, where he continues to innovate and contribute to advancements in technology. His work at Intel has positioned him as a key player in the development of cutting-edge semiconductor technologies.
Collaborations
Wu has collaborated with notable colleagues, including Grant M Kloster and Jihperng Leu. These collaborations have further enhanced his research and development efforts, leading to impactful innovations in the field.
Conclusion
Chih-I Wu's contributions to technology through his patents and work at Intel Corporation highlight his role as a significant inventor in the semiconductor industry. His innovative methods and structures continue to influence advancements in electrical conductivity and material science.