Chih-Hsin Lo

Title: Innovations of Chih-Hsin Lo in Semiconductor Technology

Chih-Hsin Lo is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent. His work focuses on enhancing the efficiency and effectiveness of semiconductor manufacturing processes.

Latest Patents

Chih-Hsin Lo holds a patent for an "Ion implantation method for semiconductor sidewalls." This method involves several key steps. First, a trench is formed on a substrate, which includes a lower reflecting layer and two sidewalls adjacent to the bottom section. Next, a plasma doping procedure is performed to sputter conductive ions onto the lower reflecting layer. The conductive ions rebound from the lower reflecting layer and adhere to the sidewalls, forming an adhesion layer. Finally, an annealing procedure is conducted to diffuse the conductive ions of the adhesion layer into the substrate, creating a conductive segment. This innovative approach allows for the formation of a conductive segment with a high conductive ion doping concentration at a predetermined region, all while avoiding damage to the substrate.

Career Highlights

Chih-Hsin Lo is currently associated with Rexchip Electronics Corporation, where he applies his expertise in semiconductor technology. His work at the company has been instrumental in advancing the field and meeting the design requirements of modern semiconductors.

Conclusion

Chih-Hsin Lo's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the industry. His work not only enhances manufacturing processes but also meets the evolving demands of semiconductor design.