The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Jun. 25, 2012
Chih-hsin Lo, Taichung, TW;
Chih-Hsin Lo, Taichung, TW;
Rexchip Electronics Corporation, Taichung, TW;
Abstract
An ion implantation method for semiconductor sidewalls includes steps of: forming a trench on a substrate, and the trench having a lower reflecting layer and two sidewalls adjacent to a bottom section; performing a plasma doping procedure to sputter conductive ions to the lower reflecting layer and the conductive ions being rebounded from the lower reflecting layer to adhere to the sidewalls to respectively form an adhesion layer thereon; and performing an annealing procedure to diffuse the conductive ions of the adhesion layer into the substrate to form a conductive segment. Thus, without damaging the substrate, the conductive segment having a high conductive ion doping concentration is formed at a predetermined region to satisfy semiconductor design requirements.