Chih-Hsin Lin

Title: Chih-Hsin Lin: Innovator in DDR PSRAM Technology

Introduction

Chih-Hsin Lin is a prominent inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of memory technology, particularly in the development of double data rate pseudo SRAM (DDR PSRAM). With a total of 4 patents to his name, Lin's work has had a notable impact on data storage and processing.

Latest Patents

One of Lin's latest patents is focused on DDR PSRAM and data writing and reading methods. This innovative technology includes a data receiver, a memory, and an address decoder. The data receiver is designed to receive a first single data rate data from a controller via a common bus according to a clock. The address decoder decodes this data to obtain the memory address, allowing the data receiver to store double data rate data into the specified memory address. Additionally, the DDR PSRAM features a data transmitter that retrieves data from the memory and provides double data rate data to the controller, along with a data strobe generating unit that toggles the data strobe signal in response to the double data rate data.

Career Highlights

Chih-Hsin Lin has worked with notable companies in the technology sector, including MediaTek and BenQ Corporation. His experience in these organizations has contributed to his expertise in memory technology and innovation.

Collaborations

Lin has collaborated with talented individuals in his field, including Tsung-Huang Chen and Bing-Shiun Wang. These partnerships have likely fostered a creative environment that has led to advancements in memory technology.

Conclusion

Chih-Hsin Lin is a distinguished inventor whose work in DDR PSRAM technology has paved the way for advancements in data storage solutions. His contributions continue to influence the industry and inspire future innovations.