Location History:
- Taoyuan, TW (2007)
- Taoyuan County, TW (2010)
- Taipei, TW (2010)
Company Filing History:
Years Active: 2007-2010
Title: Chien-Jung Yang: Innovator in Semiconductor Technology
Introduction
Chien-Jung Yang is a prominent inventor based in Taoyuan County, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in dynamic random access memory (DRAM) fabrication methods. With a total of 3 patents to his name, Yang continues to push the boundaries of innovation in his field.
Latest Patents
One of Yang's latest patents is a DRAM fabrication method using oxidation spacers on pillar dielectric sidewalls. This innovative process enhances the fabrication of dynamic random access memory by repeating the steps of forming the silicon layer, performing ion implantation, and executing a removal process multiple times. The oxidation process is performed to create an oxidation spacer that is larger than the landing area for a bit line contact, thereby increasing the process window and preventing shorts between the bit line contact and the transistor gate due to misalignment.
Another notable patent involves semiconductor devices having recessed structures and methods of forming the same. This method includes providing a substrate with protrusions, forming a silicon layer over the substrate, and performing anisotropic etching to create silicon spacers on the side walls of each protrusion. The process culminates in etching the substrate to form a recess, utilizing an oxide layer as a mask.
Career Highlights
Chien-Jung Yang is currently employed at Nan Ya Technology Corporation, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the company's capabilities in memory fabrication and device design.
Collaborations
Yang collaborates with esteemed colleagues such as Chih-Huang Wu and Shian-Jyh Lin, contributing to a dynamic team focused on innovation in semiconductor technologies.
Conclusion
Chien-Jung Yang's contributions to semiconductor technology, particularly in DRAM fabrication methods, highlight his role as a key innovator in the field. His patents reflect a commitment to enhancing the efficiency and reliability of semiconductor devices.