Hsin-Chu, Taiwan

Chien-Hung Ho


Average Co-Inventor Count = 2.0

ph-index = 7

Forward Citations = 234(Granted Patents)


Location History:

  • Kaohsiung, TW (2002)
  • Hsin-Chu, TW (2003 - 2006)

Company Filing History:


Years Active: 2002-2006

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11 patents (USPTO):Explore Patents

Title: Innovations of Chien-Hung Ho

Introduction

Chien-Hung Ho is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of memory technology, holding a total of 11 patents. His work focuses on enhancing the performance and stability of memory units and voltage generating apparatuses.

Latest Patents

One of his latest patents is titled "Memory unit with sensing current stabilization." This invention includes a memory cell, a reference cell for providing a reference current, a current mirror coupled to both cells for generating a differential current, and a sense amplifier for producing an output voltage based on the differential current. Another notable patent is the "Voltage generating apparatus with a fine-tune current module." This apparatus comprises a positive temperature coefficient current generating module, a negative temperature coefficient current generating module, a fine-tune current module, and a voltage output module. The design utilizes the characteristics of MOS devices in the sub-threshold region to generate stable currents and transform them into stable output voltage.

Career Highlights

Chien-Hung Ho is currently employed at Ememory Technology Inc., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of memory units, making them more efficient and reliable.

Collaborations

He has collaborated with notable coworkers such as Hong-Chin Lin and Jain-Hao Lu, contributing to various projects that enhance the technological landscape.

Conclusion

Chien-Hung Ho's contributions to memory technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in memory units and voltage generating systems.

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