The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2005

Filed:

Jan. 12, 2004
Applicants:

Hong-chin Lin, Taipei, TW;

Ming-chih Hsieh, Taipei, TW;

Jain-hao LU, Taipei, TW;

Chien-hung Ho, Hsin-Chu, TW;

Inventors:

Hong-chin Lin, Taipei, TW;

Ming-Chih Hsieh, Taipei, TW;

Jain-Hao Lu, Taipei, TW;

Chien-Hung Ho, Hsin-Chu, TW;

Assignee:

eMemory Technology Inc., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F003/02 ;
U.S. Cl.
CPC ...
Abstract

A four-phase dual pumping circuit has a number of stages according to the required output voltage based on an input voltage. Each stage has a first pumping unit and a second pumping unit that are mirror and identical to each other and electrically coupled to each other. The dual pumping circuit is controlled by four-phase clocks which are made from one pair of out of phase clocks. The transistors of the dual pumping circuit have special substrate connection to minimize body effects. The four-phase dual pumping circuit uses NMOSFETS for negative pumping and PMOSFETS for positive pumping.


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