Chien Hsiung Peng

Title: Chien Hsiung Peng: Innovator in Ferroelectric Applications

Introduction

Chien Hsiung Peng is a notable inventor based in Vancouver, WA (US). He has made significant contributions to the field of semiconductor technology, particularly in ferroelectric applications. With a total of 3 patents, his work has advanced the understanding and implementation of ferroelectric memory devices.

Latest Patents

One of his latest patents is titled "Chemical vapor deposition of PB5GE3O11 thin film for ferroelectric applications." This patent describes a method for forming a semiconductor structure that includes a ferroelectric memory (FEM) gate unit on a single crystal silicon substrate. The process involves creating a silicon device area, treating it to form regions for the source, gate, and drain, and depositing the FEM gate unit, which consists of a lower electrode, a c-axis oriented Pb,Ge,O,FE layer, and an upper electrode. Additionally, he has developed a patent for a "C-axis oriented thin film ferroelectric transistor memory cell," which outlines the structure of a c-axis FEM cell semiconductor, including the necessary junction regions and electrodes.

Career Highlights

Chien Hsiung Peng has worked with prominent companies such as Sharp Kabushiki Kaisha Corporation and Sharp Laboratories of America, Inc. His experience in these organizations has allowed him to refine his expertise in semiconductor technologies and ferroelectric applications.

Collaborations

Throughout his career, Chien Hsiung Peng has collaborated with notable colleagues, including Sheng Teng Hsu and Jong Jan Lee. These partnerships have contributed to the advancement of his research and innovations in the field.

Conclusion

Chien Hsiung Peng's contributions to ferroelectric applications and semiconductor technology have established him as a significant figure in the field. His innovative patents and collaborations reflect his dedication to advancing technology in this area.