The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2000
Filed:
Jan. 02, 1998
Sheng Teng Hsu, Camas, WA (US);
Jong Jan Lee, Camas, WA (US);
Chien Hsiung Peng, Vancouver, WA (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
The structure of a c-axis FEM cell semiconductor includes a silicon substrate; a source junction region and a drain junction region located in the substrate; a gate junction region located between the source junction region and the drain junction region; a FEM gate unit including a lower electrode, a c-axis oriented Pb.sub.5 Ge.sub.3 O.sub.11 FE layer and an upper electrode; wherein the FEM gate unit is sized on the gate junction region such that any edge of said FEM gate unit is a distance 'D' from the edges of the source junction region and the drain junction region; an insulating layer, having an upper surface, overlying the junction regions, the FEM gate unit and the substrate; and source, drain and gate electrodes.