Taichung, Taiwan

Chien-Hsien Wu


Average Co-Inventor Count = 3.4

ph-index = 1


Company Filing History:


Years Active: 2023-2026

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2 patents (USPTO):Explore Patents

Title: Chien-Hsien Wu: Innovator in Non-Volatile Memory Technology

Introduction

Chien-Hsien Wu is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of non-volatile memory devices. His innovative approach has led to the development of a patented method that enhances the manufacturing process of these essential components in modern electronics.

Latest Patents

Wu holds a patent for a "Method for manufacturing non-volatile memory device." This method involves several intricate steps, including forming a trench through a sacrificial layer and into a substrate. The process includes filling a first insulating material into the trench and implanting a dopant in the first insulating material through an implantation process. The method further details the removal of the first insulating material to create a recess, followed by the filling of a second insulating material and the formation of polycrystalline silicon layers. This innovative technique is crucial for improving the efficiency and reliability of non-volatile memory devices.

Career Highlights

Chien-Hsien Wu is currently employed at Winbond Electronics Corporation, a leading company in the semiconductor industry. His work focuses on advancing memory technology, which is vital for various electronic applications. Wu's expertise and innovative mindset have positioned him as a key player in the development of next-generation memory solutions.

Collaborations

Wu has collaborated with notable colleagues, including Chun-Hung Lin and Kao-Tsair Tsai. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Chien-Hsien Wu's contributions to the field of non-volatile memory technology exemplify the impact of innovation in electronics. His patented methods and collaborative efforts continue to shape the future of memory devices, ensuring advancements in technology for years to come.

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