Chi Yuan Chin

Title: Innovations by Chi Yuan Chin in Flash Memory Technology

Introduction

Chi Yuan Chin is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of flash memory technology. His innovative work focuses on improving programming and verification methods for memory systems.

Latest Patents

Chi Yuan Chin holds a patent titled "Variable program and program verification methods for a virtual ground memory in easing buried drain contacts." This patent describes methods for programming and program verification of flash memory that alleviate issues caused by buried drain contacts and enhance the retention window. The invention includes a program operation method that applies varying program biases to different groups of memory cells. These biases can be supplied as drain or gate bias voltages, which vary based on the group of memory cells being programmed. In one embodiment, a specific drain voltage is applied to the first group of memory cells, while a different voltage is applied to the second group, ensuring effective programming.

Career Highlights

Chi Yuan Chin is associated with Macronix International Co., Ltd., a company known for its advancements in memory solutions. His work at Macronix has been pivotal in developing innovative technologies that address challenges in memory programming and verification.

Collaborations

Chi Yuan Chin has collaborated with notable colleagues, including Ming Shiang Chen and Wen Pin Lu. Their combined expertise has contributed to the success of various projects within the company.

Conclusion

Chi Yuan Chin's contributions to flash memory technology exemplify the importance of innovation in the field. His patent and work at Macronix International Co., Ltd. highlight his role as a key inventor in advancing memory solutions.