Hsinchu, Taiwan

Chi-Hsing Lin

USPTO Granted Patents = 1 

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025

Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Chi-Hsing Lin

Introduction

Chi-Hsing Lin is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of plasma processing technology. His work focuses on enhancing the efficiency and longevity of plasma processing tools.

Latest Patents

Chi-Hsing Lin holds a patent for a "Method and apparatus for revitalizing plasma processing tools." This innovative method involves revitalizing components of a plasma processing apparatus. It includes a sensor that detects the thickness or roughness of a peeling weakness layer on a protective surface coating. The method also identifies airborne contaminants generated by this peeling weakness layer. By detecting detrimental amounts of buildup or airborne concentration, the revitalization process can be initiated. This process bead beats the peeling weakness layer to remove it while maintaining the integrity of the protective surface coating. He has 1 patent to his name.

Career Highlights

Chi-Hsing Lin is currently employed at Taiwan Semiconductor Manufacturing Company Ltd. His work at this leading semiconductor manufacturer has allowed him to apply his innovative ideas in a practical setting. His contributions have been instrumental in advancing the technology used in semiconductor manufacturing.

Collaborations

Chi-Hsing Lin has collaborated with talented individuals such as Chen-Fon Chang and Chun-Yi Wu. These collaborations have fostered a creative environment that encourages innovation and problem-solving.

Conclusion

Chi-Hsing Lin's work exemplifies the spirit of innovation in the field of plasma processing technology. His patent and contributions to Taiwan Semiconductor Manufacturing Company Ltd. highlight his commitment to advancing technology. His efforts continue to impact the industry positively.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…