High Point, NC, United States of America

Chi-Hsien Chiu

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Qorvo US, Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chi-Hsien Chiu. Retrieved from https://idiyas.com/inventor/chi-hsien-chiu-ge44lzry

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Chi-Hsien Chiu: Semiconductor and RF Switch Innovation

Introduction

Chi-Hsien Chiu is an inventor associated with High Point, North Carolina, and Qorvo US, Inc. His patent work concerns semiconductor integration and radio-frequency (RF) switching technology. The supplied information lists 1 patent associated with him.

Latest Patents

Chiu’s listed patent, “Wafer-Level Hybrid Bonded RF Switch with Redistribution Layer,” describes an integrated circuit device built from two active semiconductor layers connected in a stacked arrangement. The design includes a first redistribution layer electrically connected to both active semiconductor layers, a passivation layer above it, and a second redistribution layer electrically connected to the first. These features describe an approach to integrating semiconductor devices and routing electrical connections within a wafer-level RF switch.

Career Highlights

Chiu’s listed invention reflects work in semiconductor device architecture, wafer-level hybrid bonding, and redistribution-layer design. The supplied information identifies Qorvo US, Inc. as his company.

Collaborations

Michael Carroll and Eric K. Bolton are identified as Chiu’s coworkers. Their names provide context for his professional environment, though the supplied information does not specify their roles in the patent.

Conclusion

Chi-Hsien Chiu’s listed patent focuses on a layered integrated-circuit structure for an RF switch, combining active semiconductor layers with electrically connected redistribution layers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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