Taiwan, China

Chi-cherng Jeng

This inventor holds 1 USPTO granted patent. Top assignee: Nexchip Semiconductor Corporation. Active years: 2026.


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Chi-cherng Jeng: Innovator in Semiconductor Technology

Introduction

Chi-cherng Jeng is a prominent inventor based in Taiwan, known for his contributions to semiconductor technology. He has made significant strides in the field, particularly with his innovative patent that enhances semiconductor device manufacturing.

Latest Patents

Chi-cherng Jeng holds a patent for a semiconductor device and its manufacturing method. This invention includes a substrate, a shallow trench isolation structure, a dielectric layer, a gate, a source, and a drain. The substrate is divided into a first region and a second region, with the shallow trench isolation structure positioned on both regions. This structure is lower than the substrate's surface and creates an opening. The dielectric layer is placed within this opening and on the substrate, with its height in the second region being greater than in the first. The gate is situated on the dielectric layer, while the source and drain are located on either side of the gate on the substrate.

Career Highlights

Chi-cherng Jeng is associated with Nexchip Semiconductor Corporation, where he applies his expertise in semiconductor technology. His work has contributed to advancements in the manufacturing processes of semiconductor devices.

Collaborations

He collaborates with notable colleagues such as Wei Pang Chen and Chih-nan Wu, further enhancing the innovative environment at Nexchip Semiconductor Corporation.

Conclusion

Chi-cherng Jeng's contributions to semiconductor technology through his patent and work at Nexchip Semiconductor Corporation highlight his role as a key innovator in the field. His advancements continue to influence the industry and pave the way for future developments.

Profile summary based on public USPTO records.
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