Cheung Cheng

Title: Cheung Cheng: Innovator in Memory Device Technology

Introduction

Cheung Cheng is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory devices, holding a total of 4 patents. His work focuses on advancing technology that enhances data storage and retrieval.

Latest Patents

One of Cheung Cheng's latest patents is a resistive random access memory device. This innovative memory device includes a first conductor that extends in parallel with a first axis. It features a first selector material with a portion that extends along the first sidewall of the first conductor. Additionally, a second selector material also extends along the first sidewall of the first conductor. The device incorporates a first variable resistive material that extends along the same sidewall, along with a second conductor that runs parallel to a second axis, which is substantially perpendicular to the first axis. The arrangement of these materials is designed to optimize performance and efficiency in memory storage.

Career Highlights

Cheung Cheng is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to innovate in the field of semiconductor technology. His expertise in memory devices has positioned him as a key player in the industry.

Collaborations

Throughout his career, Cheung has collaborated with talented individuals such as Jheng-Hong Jiang and Chia-Wei Liu. These collaborations have further enriched his work and contributed to the development of advanced memory technologies.

Conclusion

Cheung Cheng's contributions to memory device technology exemplify his innovative spirit and dedication to advancing the field. His patents reflect a commitment to improving data storage solutions, making him a significant figure in the industry.