Anyang-si, South Korea

Cheol-soon Kim

USPTO Granted Patents = 18 

Average Co-Inventor Count = 3.3

ph-index = 6

Forward Citations = 85(Granted Patents)


Location History:

  • Yongin, KR (2003)
  • Kyungki-do, KR (2006)
  • Anyang, KR (2006)
  • Anyang-si, KR (2007 - 2011)
  • Yongin-si, KR (2010 - 2012)

Company Filing History:


Years Active: 2003-2012

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18 patents (USPTO):Explore Patents

Title: Cheol-soon Kim: Innovator in Nanowire Memory Technology

Introduction

Cheol-soon Kim is a prominent inventor based in Anyang-si, South Korea. He has made significant contributions to the field of memory devices, holding a total of 18 patents. His innovative work focuses on advanced memory technologies that have the potential to revolutionize data storage.

Latest Patents

One of his latest patents is for a nanowire memory device and the method of manufacturing the same. This invention includes a substrate, a first electrode formed on the substrate, and a first nanowire extending from an end of the first electrode. Additionally, it features a second electrode formed over the first electrode to overlap it, along with a second nanowire extending from the end of the second electrode in the same direction as the first nanowire. An insulating layer exists between the first and second electrodes, enhancing the device's functionality.

Career Highlights

Cheol-soon Kim has had a distinguished career, working with leading organizations such as Samsung Electronics and Seoul National University. His experience in these prestigious institutions has allowed him to develop cutting-edge technologies and contribute to significant advancements in the field of memory devices.

Collaborations

Throughout his career, Cheol-soon Kim has collaborated with notable colleagues, including Yong-kyu Byun and Jin-gyoo Yoo. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Cheol-soon Kim's work in nanowire memory technology exemplifies his commitment to innovation and excellence. His contributions continue to shape the future of memory devices, making him a key figure in the field.

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