The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Mar. 21, 2012
Applicants:
Jin-gyoo Yoo, Yongin-si, KR;
Cheol-soon Kim, Yongin-si, KR;
Jung-hoon Lee, Seoul, KR;
Inventors:
Assignees:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seoul National University Industry Foundation, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
Abstract
A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.