This inventor holds 6 USPTO granted patents. Top assignees: Samsung Electronics Co., Ltd., Fairchild Korea Semiconductor Ltd.. Active years: 1998-2004.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Bucheon-si, KR (1999)
- Kyungki-do, KR (1998 - 2003)
- Bucheon, KR (2004)
Company Filing History:

Years Active: 1998-2004
Title: The Innovations of Cheol-Joong Kim
Introduction
Cheol-Joong Kim is a prominent inventor based in Kyungki-do, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on advanced manufacturing methods for semiconductor devices, particularly those involving bipolar transistors.
Latest Patents
One of his latest patents involves a manufacturing method of a semiconductor device that features a polysilicon electrode. This patent describes a semiconductor device and a method for creating it, which includes a vertical NPN bipolar transistor, a lateral PNP bipolar transistor, and both P-type and N-type resistors. The process begins with forming a photoresist pattern on a pad oxide layer and field oxides on an N-type epitaxial layer grown on a P-type semiconductor substrate. Following this, the pad oxide layer is etched after implanting P-type impurities into the epitaxial layer using the photoresist pattern as a mask. The method continues with the deposition of a polysilicon layer, followed by the sequential implantation of P-type and N-type impurities. Another photoresist pattern is then used to etch the polysilicon layer, forming the electrodes of transistors and resistors while exposing the surface of the epitaxial layer near the emitter region of the vertical transistor. The structure undergoes heat treatment to establish the emitter, intrinsic and extrinsic base, and collector regions of the transistors.
Another notable patent by Kim details methods for manufacturing complementary bipolar transistors. This invention includes a lateral NPN bipolar transistor, a vertical and a lateral PNP bipolar transistor, integrated injection logic, a diffusion capacitor, a polysilicon capacitor, and polysilicon resistors. The design of the lateral PNP bipolar transistor features an emitter region and a collector region with high-density and low-density regions, with the emitter region situated in an N-type tub region. The integrated injection logic circuit is characterized by collector regions surrounded by high-density P-type regions, with low-density P-type regions formed beneath the collector regions. The diffusion capacitor and polysilicon capacitor are integrated within a single substrate.
Career Highlights
Cheol-Joong Kim has worked with several notable companies in the semiconductor industry, including Samsung Electronics and Fairchild Korea Semiconductor. His experience in these organizations has contributed to his expertise in semiconductor device manufacturing and innovation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile