Shanghai, China

Chenyu Wen

This inventor holds 1 USPTO granted patent. Top assignee: Fudan University. Active years: 2015.


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Innovations of Chenyu Wen in Semiconductor Technology

Introduction

Chenyu Wen is a notable inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent. His work focuses on enhancing the efficiency and performance of semiconductor devices.

Latest Patents

Chenyu Wen holds a patent for a semiconductor device and method of making it. This patent discloses a novel approach to semiconductor technologies, where a transistor's source and drain are led out by concurrently formed metal-semiconductor compound contact regions. The method minimizes resistance by utilizing metal-semiconductor compounds in vias formed at positions corresponding to the source and drain. This innovation ensures that the contact resistance between the materials is minimized, leading to improved performance of semiconductor devices.

Career Highlights

Chenyu Wen is affiliated with Fudan University, where he continues to advance research in semiconductor technologies. His work has garnered attention for its practical applications and potential to revolutionize the industry.

Collaborations

Chenyu has collaborated with esteemed colleagues such as Dongping Wu and Wei Zhang, contributing to a dynamic research environment that fosters innovation and development in semiconductor technology.

Conclusion

Chenyu Wen's contributions to semiconductor technology through his patent demonstrate his commitment to advancing the field. His innovative methods and collaborative efforts position him as a key figure in the ongoing evolution of semiconductor devices.

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